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N25Q512A83G1240E
N25Q512A83G1240E
Flash N25Q512A83G1240E
Micron Technology
N25Q512A83G1240E
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991b.1.a.
PackagingTray
Page Size256byte
Pin Count24
AutomotiveNo
Boot BlockYes
Lead ShapeBall
ECC SupportNo
PCB changed24
Part StatusObsolete
Sector Size64Kbyte x 1024
Timing TypeSynchronous
ArchitectureSectored
Package Width6
Interface TypeSerial (SPI, Dual SPI, Quad SPI)
Package Height0.79
Package Length8
Number of Words512M/256M/128M
ProgrammabilityYes
Supplier PackageTFBGA
Block OrganizationSymmetrical
Chip Density (bit)512M
Command CompatibleYes
Process Technology65nm
Program Current (mA)20
Support of Page ModeNo
Max. Access Time (ns)8
Standard Package NameBGA
Location of Boot BlockBottom|Top
Maximum Erase Time (s)3/Sector
Operating Current (mA)20
Address Bus Width (bit)32
Programming Voltage (V)2.7 to 3.6|8.5 to 9.5
Number of Bits/Word (bit)1/2/4
Minimum Endurance (Cycles)100000
Maximum Programming Time (ms)5/Page
Maximum Operating Frequency (MHz)108
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3
Description
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V 512M-bit 512M/256M/128M x 1/2-bit/4-bit 8ns 24-Pin TFBGA Tray
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