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NAND01GW3B2AN6E
NAND01GW3B2AN6E
Flash NAND01GW3B2AN6E
Micron Technology
NAND01GW3B2AN6E
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNAND
ECCN (US)3A991.b.1.a
PackagingTray
Page Size1KWords/2Kbyte
Pin Count48
AutomotiveNo
Boot BlockNo
Lead ShapeGull-wing
ECC SupportYes
PCB changed48
Part StatusObsolete
Sector Size128Kbyte x 1024
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.4
Interface TypeParallel
Package Height1
Package Length12
Number of Words128M
ProgrammabilityYes
Supplier PackageTSOP
Block OrganizationSymmetrical
Chip Density (bit)1G
Command CompatibleNo
Program Current (mA)30
Support of Page ModeYes
Max. Access Time (ns)25000
Standard Package NameSOP
Maximum Erase Time (s)0.003/Block
Operating Current (mA)30
Address Bus Width (bit)28
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)8
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)0.7/Page
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3|3
Description
NAND Flash Parallel 3V/3.3V 1G-bit 128M x 8 25us 48-Pin TSOP Tray
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