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NAND02GW3B2CZA6F
NAND02GW3B2CZA6F
Flash NAND02GW3B2CZA6F
Micron Technology
NAND02GW3B2CZA6F
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNAND
ECCN (US)3A991.b.1.a
PackagingTape and Reel
Page Size2Kbyte
Pin Count63
AutomotiveNo
Boot BlockNo
Lead ShapeBall
ECC SupportYes
PCB changed63
Part StatusUnconfirmed
Sector Size128Kbyte x 2048
Timing TypeAsynchronous
ArchitectureSectored
Package Width9.5
Interface TypeParallel
Package Height0.7(Max)
Package Length12
Number of Words256M
ProgrammabilityYes
Supplier PackageVFBGA
Block OrganizationSymmetrical
Chip Density (bit)2G
Command CompatibleNo
Program Current (mA)30
Support of Page ModeYes
Max. Access Time (ns)25000
Standard Package NameBGA
Maximum Erase Time (s)0.003/Block
Operating Current (mA)30
Address Bus Width (bit)29
Number of Bits/Word (bit)8
Maximum Page Access Time (ns)50(Min)
Maximum Programming Time (ms)0.7/Page
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NAND Flash Parallel 3V/3.3V 2G-bit 256M x 8 25us 63-Pin VFBGA T/R
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