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NAND02GW3B2DZA6F
NAND02GW3B2DZA6F
Flash NAND02GW3B2DZA6F
Micron Technology
NAND02GW3B2DZA6F
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)3A991.b.1.a
PackagingTape and Reel
Page Size2Kbyte
Pin Count63
AutomotiveNo
Boot BlockNo
Lead ShapeBall
ECC SupportYes
PCB changed63
Part StatusObsolete
Sector Size128Kbyte x 2048
Timing TypeAsynchronous
ArchitectureSectored
Package Width9
Interface TypeParallel
Package Height0.7(Max)
Package Length11
Number of Words256M
ProgrammabilityYes
Supplier PackageVFBGA
Block OrganizationSymmetrical
Chip Density (bit)2G
Command CompatibleNo
Program Current (mA)30
Support of Page ModeYes
Max. Access Time (ns)25
Standard Package NameBGA
Maximum Erase Time (s)0.002/Block
Operating Current (mA)30
Address Bus Width (bit)29
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)8
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)0.7/Page
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
SLC NAND Flash Parallel 3V/3.3V 2G-bit 256M x 8 25ns 63-Pin VFBGA T/R
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