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NAND256W3A0BZA6F
NAND256W3A0BZA6F
Flash NAND256W3A0BZA6F
Micron Technology
NAND256W3A0BZA6F
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)3A991.b.1.a
PackagingTape and Reel
Page Size256Words/512byte
Pin Count55
AutomotiveNo
Boot BlockNo
Lead ShapeBall
ECC SupportYes
PCB changed55
Part StatusObsolete
Sector Size16Kbyte x 2048
Timing TypeAsynchronous
ArchitectureSectored
Package Width8
Interface TypeParallel
Package Height0.65
Package Length10
Number of Words32M
ProgrammabilityYes
Supplier PackageVFBGA
Block OrganizationSymmetrical
Chip Density (bit)256M
Command CompatibleNo
Program Current (mA)20
Support of Page ModeYes
Max. Access Time (ns)12000
Standard Package NameBGA
Maximum Erase Time (s)0.003/Block
Operating Current (mA)20
Address Bus Width (bit)25
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)50(Min)
Maximum Programming Time (ms)0.5/Page
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
SLC NAND Flash Parallel 3V/3.3V 256M-bit 32M x 8 12us 55-Pin VFBGA T/R
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