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NAND512R3A2SZA6F
NAND512R3A2SZA6F
Flash NAND512R3A2SZA6F
Micron Technology
NAND512R3A2SZA6F
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)3A991.b.1.a
PackagingTape and Reel
Page Size512byte
Pin Count63
AutomotiveNo
Boot BlockNo
Lead ShapeBall
ECC SupportYes
PCB changed63
Part StatusObsolete
Sector Size16Kbyte x 4096
Timing TypeAsynchronous
ArchitectureSectored
Package Width9
Interface TypeParallel
Package Height0.65
Package Length11
Number of Words64M
ProgrammabilityYes
Supplier PackageVFBGA
Block OrganizationSymmetrical
Chip Density (bit)512M
Command CompatibleYes
Program Current (mA)15
Support of Page ModeYes
Max. Access Time (ns)15000
Standard Package NameBGA
Maximum Erase Time (s)0.003/Block
Operating Current (mA)15
Address Bus Width (bit)26
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)50(Min)
Maximum Programming Time (ms)0.5/Page
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)1.95
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
SLC NAND Flash Parallel 1.8V 512M-bit 64M x 8 15us 63-Pin VFBGA T/R
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