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NAND512W3A2DZA6F
NAND512W3A2DZA6F
Flash NAND512W3A2DZA6F
Micron Technology
NAND512W3A2DZA6F
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNAND
ECCN (US)3A991.b.1.a
PackagingTape and Reel
Page Size512byte
Pin Count63
AutomotiveNo
Boot BlockNo
Lead ShapeBall
ECC SupportYes
PCB changed63
Part StatusObsolete
Sector Size16Kbyte x 4096
Timing TypeAsynchronous
ArchitectureSectored
Package Width9
Interface TypeParallel
Package Height0.7(Max)
Package Length11
Number of Words64M
ProgrammabilityYes
Supplier PackageVFBGA
Block OrganizationSymmetrical
Chip Density (bit)512M
Command CompatibleNo
Program Current (mA)30
Support of Page ModeYes
Max. Access Time (ns)12000
Standard Package NameBGA
Maximum Erase Time (s)0.003/Block
Operating Current (mA)30
Address Bus Width (bit)26
Number of Bits/Word (bit)8
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)12000
Maximum Programming Time (ms)0.7/Page
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3|3
Description
NAND Flash Parallel 3V/3.3V 512M-bit 64M x 8 12us 63-Pin VFBGA T/R
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