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PC28F128P33TF60E
PC28F128P33TF60E
Flash PC28F128P33TF60E
Micron Technology
PC28F128P33TF60E
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTape and Reel
Page Size8Words
Pin Count64
AutomotiveNo
Boot BlockYes
Lead ShapeBall
ECC SupportNo
PCB changed64
Part StatusObsolete
Sector Size128Kbyte x 127|32Kbyte x 4
Timing TypeSynchronous|Asynchronous
ArchitectureSectored
Package Width8
Interface TypeSerial|Parallel
Package Height0.78
Package Length10
Number of Words8M
ProgrammabilityYes
Supplier PackageBGA
Block OrganizationAsymmetrical
Chip Density (bit)128M
Command CompatibleYes
Process Technology65nm
Program Current (mA)50
Support of Page ModeYes
Max. Access Time (ns)60
Standard Package NameBGA
Location of Boot BlockTop
Maximum Erase Time (s)4/Main Block
Operating Current (mA)28
Page Read Current (mA)16
Address Bus Width (bit)23
Programming Voltage (V)8.5 to 9.5
Number of Bits/Word (bit)16
Minimum Endurance (Cycles)100000
Maximum Page Access Time (ns)25
Maximum Programming Time (ms)0.175/Word
Maximum Operating Frequency (MHz)52
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.3
Typical Operating Supply Voltage (V)3.3|2.5
Description
NOR Flash Parallel/Serial 2.5V/3.3V 128M-bit 8M x 16 60ns 64-Pin BGA T/R
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