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PC28F256M29EWHA
PC28F256M29EWHA
Flash PC28F256M29EWHA
Micron Technology
PC28F256M29EWHA
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)EAR99
PackagingTray
Page Size16Words/32byte
Pin Count64
AutomotiveNo
Boot BlockYes
Lead ShapeBall
ECC SupportNo
PCB changed64
Part StatusObsolete
Sector Size128Kbyte x 256
Timing TypeAsynchronous
ArchitectureSectored
Package Width11
Interface TypeParallel
Package Height0.8
Package Length13
Number of Words32M/16M
ProgrammabilityYes
Supplier PackageFortified BGA
Block OrganizationSymmetrical
Chip Density (bit)256M
Command CompatibleYes
Process Technology65nm
OE Access Time (ns)25
Program Current (mA)50
Support of Page ModeYes
Max. Access Time (ns)100
Standard Package NameBGA
Location of Boot BlockTop|Bottom
Maximum Erase Time (S)4/Block
Operating Current (mA)31
Page Read Current (mA)16
Address Bus Width (bit)25/24
Programming Voltage (V)11.5 to 12.5
Number of Bits/Word (bit)8/16
Minimum Endurance (Cycles)100000
Maximum Page Access Time (ns)25
Maximum Programming Time (ms)3.016/Word
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3|3
Description
NOR Flash Parallel 3V/3.3V 256M-bit 32M x 8/16M x 16 100ns 64-Pin Fortified BGA Tray
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