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PC28F512P30TF4
PC28F512P30TF4
Flash PC28F512P30TF4
Micron Technology
PC28F512P30TF4
--
Memory
Flash
Specification
Product AttributeAttribute Value
EU RoHSCompliant
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTray
Page Size16Words
Boot BlockYes
ECC SupportYes
Part StatusObsolete
Sector Size128Kbyte x 511|32Kbyte x 4
Timing TypeSynchronous|Asynchronous
ArchitectureSectored
Interface TypeSerial|Parallel
Number of Words32M
ProgrammabilityYes
Block OrganizationAsymmetrical
Chip Density (bit)512M
Command CompatibleYes
Process Technology65nm
OE Access Time (ns)25
Program Current (mA)50
Support of Page ModeYes
Max. Access Time (ns)100
Location of Boot BlockTop
Maximum Erase Time (s)4/Block
Operating Current (mA)31
Page Read Current (mA)16
Address Bus Width (bit)25
Programming Voltage (V)8.5 to 9.5
Number of Bits/Word (bit)16
Minimum Endurance (Cycles)100000
Maximum Page Access Time (ns)25
Maximum Programming Time (ms)0.456/Word
Maximum Operating Frequency (MHz)52
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)2
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
NOR Flash Parallel/Serial 1.8V 512M-bit 32M x 16 100ns 64-Pin BGA Tray
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