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Flash PF48F3000M0Y0QEA
Micron Technology
PF48F3000M0Y0QEA
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTray
Page Size8Words/16Words
AutomotiveNo
Boot BlockNo
ECC SupportNo
Part StatusUnconfirmed
Sector Size256Kbyte x 64
Timing TypeAsynchronous|Synchronous
ArchitectureSectored
Interface TypeParallel
Number of Words8M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)128M
Command CompatibleNo
OE Access Time (ns)20
Program Current (mA)50
Support of Page ModeYes
Max. Access Time (ns)96
Maximum Erase Time (s)4/Block
Operating Current (mA)46
Page Read Current (mA)15@13MHz
Address Bus Width (bit)1
Programming Voltage (V)8.5 to 9.5
Number of Bits/Word (bit)16
Maximum Programming Time (ms)0.23/Word
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-30
Maximum Operating Supply Voltage (V)2
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
NOR Flash Parallel 1.8V 128M-bit 8M x 16 96ns Tray
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