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RC28F640J3F75B
RC28F640J3F75B
Flash RC28F640J3F75B
Micron Technology
RC28F640J3F75B
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTape and Reel
Page Size8Words
Pin Count64
AutomotiveNo
Boot BlockNo
Lead ShapeBall
ECC SupportNo
PCB changed64
Part StatusObsolete
Sector Size128Kbyte x 64
Timing TypeAsynchronous
ArchitectureSectored
Package Width10
Interface TypeParallel
Package Height0.78
Package Length13
Number of Words8M/4M
ProgrammabilityYes
Supplier PackageEBGA
Block OrganizationSymmetrical
Chip Density (bit)64M
Command CompatibleNo
Process Technology65nm
Program Current (mA)70
Support of Page ModeYes
Max. Access Time (ns)75
Standard Package NameBGA
Maximum Erase Time (S)4/Block
Operating Current (mA)54
Address Bus Width (bit)23/22
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)8/16
Minimum Endurance (Cycles)100000
Maximum Page Access Time (ns)25
Maximum Programming Time (ms)0.175/Word
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3|3
Description
NOR Flash Parallel 3V/3.3V 64M-bit 8M x 8/4M x 16 75ns 64-Pin EBGA T/R
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