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RC28F640P30BF65A
RC28F640P30BF65A
Flash RC28F640P30BF65A
Micron Technology
RC28F640P30BF65A
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTray
Page Size8Words
Pin Count64
AutomotiveNo
Boot BlockYes
ECC SupportNo
PCB changed64
Part StatusObsolete
Sector Size128Kbyte x 63|32Kbyte x 4
Timing TypeSynchronous|Asynchronous
ArchitectureSectored
Package Width10
Interface TypeParallel|Serial
Package Height0.78
Package Length13
Number of Words4M
ProgrammabilityYes
Supplier PackageEBGA
Block OrganizationAsymmetrical
Chip Density (bit)64M
Command CompatibleYes
Process Technology65nm
OE Access Time (ns)25
Program Current (mA)50
Support of Page ModeYes
Max. Access Time (ns)65
Standard Package NameBGA
Location of Boot BlockBottom
Maximum Erase Time (S)4/Block
Operating Current (mA)28
Page Read Current (mA)16
Address Bus Width (bit)22
Programming Voltage (V)8.5 to 9.5
Number of Bits/Word (bit)16
Minimum Endurance (Cycles)100000
Maximum Page Access Time (ns)25
Maximum Programming Time (ms)0.175/Word
Maximum Operating Frequency (MHz)52
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)2
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
NOR Flash Parallel/Serial 1.8V 64M-bit 4M x 16 65ns 64-Pin EBGA Tray
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