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S25FL064LABBHN030
S25FL064LABBHN030
Flash S25FL064LABBHN030
Cypress
S25FL064LABBHN030
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991b.1.a.
PackagingTray
Page Size256byte
Pin Count24
AutomotiveNo
Boot BlockYes
Lead ShapeBall
ECC SupportNo
PCB changed24
Part StatusUnconfirmed
Sector Size4Kbyte x 2048
Timing TypeSynchronous
ArchitectureSectored
Package Width6
Interface TypeSerial (SPI, Dual SPI, Quad SPI)
Package Height1.2(Max) - 0.25(Min)
Package Length8
Number of Words64M/32M/16M
ProgrammabilityYes
Supplier PackageBGA
Block OrganizationSymmetrical
Chip Density (bit)64M
Command CompatibleYes
Process Technology65nm, Floating Gate
Program Current (mA)25
Support of Page ModeNo
Max. Access Time (ns)8
Standard Package NameBGA
Location of Boot BlockBottom|Top
Maximum Erase Time (s)150/Chip
Operating Current (mA)30
Address Bus Width (bit)32
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)1/2/4
Minimum Endurance (Cycles)100000
Supplier Temperature GradeExtended
Maximum Programming Time (ms)1.35/Page
Maximum Operating Frequency (MHz)108
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 64M-bit 64M/32M/16M x 1/2-bit/4-bit 8ns 24-Pin BGA Tray
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