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Flash S25FL116K0XMFI04
Cypress
S25FL116K0XMFI04
--
Memory
Flash
Specification
Product AttributeAttribute Value
EU RoHSCompliant
Cell TypeNOR
PackagingTape and Reel
Page Size256byte
Boot BlockYes
ECC SupportNo
Part StatusObsolete
Sector Size4Kbyte x 512
Timing TypeSynchronous
ArchitectureSectored
Interface TypeSerial-SPI
Number of Words2M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)16M
Command CompatibleYes
Process Technology90nm
Program Current (mA)25
Support of Page ModeNo
Max. Access Time (ns)7
Location of Boot BlockBottom|Top
Maximum Erase Time (S)64/Chip
Operating Current (mA)25
Address Bus Width (bit)24
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)3/Page
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
SPI FLASH Memory
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