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S25FL116K0XNFI010
S25FL116K0XNFI010
Flash S25FL116K0XNFI010
Cypress
S25FL116K0XNFI010
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)EAR99
PackagingTray
Page Size256byte
Pin Count8
AutomotiveNo
Boot BlockNo
Lead ShapeNo Lead
ECC SupportNo
PCB changed8
Part StatusObsolete
Sector Size4Kbyte x 512
Timing TypeSynchronous
ArchitectureSectored
Package Width6
Interface TypeSerial (SPI, Dual SPI, Quad SPI)
Package Height0.73
Package Length5
Number of Words16M/8M/4M
ProgrammabilityYes
Supplier PackageWSON EP
Block OrganizationSymmetrical
Chip Density (bit)16M
Command CompatibleYes
Process Technology90nm, Floating Gate
Program Current (mA)25
Support of Page ModeNo
Max. Access Time (ns)8.5
Standard Package NameSON
Maximum Erase Time (s)64/Chip
Operating Current (mA)25
Address Bus Width (bit)24
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)1/2/4
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)3/Page
Maximum Operating Frequency (MHz)108
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 16M-bit 16M/8M/4M x 1/2-bit/4-bit 8.5ns 8-Pin WSON EP Tray
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