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S25FL128LAGBHM023
S25FL128LAGBHM023
Flash S25FL128LAGBHM023
Infineon
S25FL128LAGBHM023
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPYes
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTape and Reel
Page Size256byte
Pin Count24
AutomotiveYes
Boot BlockYes
Lead ShapeBall
ECC SupportNo
PCB changed24
Part StatusActive
Sector Size4Kbyte x 4096
Timing TypeSynchronous
ArchitectureSectored
Package Width6
Interface TypeSerial (SPI, Dual SPI, Quad SPI)
Package Height1.2(Max) - 0.2(Min)
Package Length8
Number of Words128M/64M/32M
ProgrammabilityYes
Supplier PackageBGA
Block OrganizationSymmetrical
Chip Density (bit)128M
Command CompatibleYes
Process Technology65nm, Floating Gate
Program Current (mA)50
Support of Page ModeNo
Max. Access Time (ns)8
Standard Package NameBGA
Location of Boot BlockBottom|Top
Maximum Erase Time (S)180/Chip
Operating Current (mA)35
Address Bus Width (bit)32
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)1/2/4
Minimum Endurance (Cycles)100000
Supplier Temperature GradeAutomotive
Maximum Programming Time (ms)1.2/Page
Maximum Operating Frequency (MHz)133
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 128M-bit 128M/64M/32M x 1/2-bit/4-bit 8ns Automotive 24-Pin BGA T/R
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