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Flash S25FL128LAGMFB013
Cypress
S25FL128LAGMFB013
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPYes
EU RoHSCompliant
Cell TypeNOR
ECCN (US)3A991.b.1.a
Page Size256byte
Pin Count8
AutomotiveYes
Boot BlockYes
ECC SupportNo
Part StatusActive
Sector Size4Kbyte x 4096
Timing TypeSynchronous
ArchitectureSectored
Interface TypeSerial (SPI, Dual SPI, Quad SPI)
Number of Words128M/64M/32M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)128M
Command CompatibleYes
Process Technology65nm, Floating Gate
Program Current (mA)50
Support of Page ModeNo
Max. Access Time (ns)8
Location of Boot BlockBottom|Top
Maximum Erase Time (S)180/Chip
Operating Current (mA)35
Address Bus Width (bit)32
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)1/2/4
Minimum Endurance (Cycles)100000
Supplier Temperature GradeAutomotive
Maximum Programming Time (ms)1.2/Page
Maximum Operating Frequency (MHz)133
Maximum Operating Temperature (°C)105
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 128M-bit 128M/64M/32M x 1/2-bit/4-bit 8ns 8-Pin T/R
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