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S25FL128SAGNFB000
S25FL128SAGNFB000
Flash S25FL128SAGNFB000
Cypress
S25FL128SAGNFB000
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.B.1.A
PackagingTray
Page Size512byte|256byte
Pin Count8
AutomotiveYes
Boot BlockYes
ECC SupportYes
PCB changed8
Part StatusActive
Timing TypeSynchronous
ArchitectureSectored
Package Width8
Interface TypeSerial (SPI, Dual SPI, Quad SPI)
Package Height0.73
Package Length6
Number of Words128M/64M/32M
ProgrammabilityYes
Supplier PackageWSON EP
Block OrganizationSymmetrical
Chip Density (bit)128M
Command CompatibleYes
Process Technology65nm, MirrorBit
Program Current (mA)100
Support of Page ModeNo
Max. Access Time (ns)14.5
Location of Boot BlockTop|Bottom
Maximum Erase Time (s)165/Bulk
Operating Current (mA)100
Address Bus Width (bit)32
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)1/2/4
Minimum Endurance (Cycles)100000
Maximum Programming Time (ms)0.75/Page
Maximum Operating Frequency (MHz)133
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3|3
Description
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 128M-bit 128M/64M/32M x 1/2-bit/4-bit 14.5ns Automotive 8-Pin WSON EP Tray
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