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S25FL256LAGMFN003
S25FL256LAGMFN003
Flash S25FL256LAGMFN003
Infineon
S25FL256LAGMFN003
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTape and Reel
Page Size256byte
Pin Count16
AutomotiveNo
Boot BlockYes
Lead ShapeGull-wing
ECC SupportNo
PCB changed16
Sector Size4Kbyte x 8192
Timing TypeSynchronous
ArchitectureSectored
Package Width7.5
Interface TypeSerial (SPI, Dual SPI, Quad SPI)
Package Height2.55(Max)
Package Length10.3
Number of Words256M/128M/64M
ProgrammabilityYes
Supplier PackageSOIC
Block OrganizationSymmetrical
Chip Density (bit)256M
Command CompatibleYes
Process Technology65nm, Floating Gate
Program Current (mA)50
Support of Page ModeNo
Max. Access Time (ns)8
Standard Package NameSOP
Location of Boot BlockBottom|Top
Maximum Erase Time (S)360/Chip
Operating Current (mA)35
Address Bus Width (bit)32
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)1/2/4
Minimum Endurance (Cycles)100000
Supplier Temperature GradeExtended
Maximum Programming Time (ms)1.2/Page
Maximum Operating Frequency (MHz)133
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 256M-bit 256M/128M/64M x 1/2-bit/4-bit 8ns 16-Pin SOIC T/R
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