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S25FL256LAGNFI010
S25FL256LAGNFI010
Flash S25FL256LAGNFI010
Cypress
S25FL256LAGNFI010
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.51
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991b.1.a.
PackagingTray
Page Size256byte
Pin Count8
AutomotiveNo
Boot BlockYes
ECC SupportNo
PCB changed8
Part StatusActive
Sector Size4Kbyte x 8192
Timing TypeSynchronous
ArchitectureSectored
Package Width8
Interface TypeSerial (SPI, Dual SPI, Quad SPI)
Package Height0.73
Package Length6
Number of Words256M/128M/64M
ProgrammabilityYes
Supplier PackageWSON EP
Block OrganizationSymmetrical
Chip Density (bit)256M
Command CompatibleYes
Process Technology65nm, Floating Gate
Program Current (mA)50
Support of Page ModeNo
Max. Access Time (ns)8
Location of Boot BlockBottom|Top
Maximum Erase Time (s)360/Chip
Operating Current (mA)35
Address Bus Width (bit)32
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)1/2/4
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)1.2/Page
Maximum Operating Frequency (MHz)133
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 256M-bit 256M/128M/64M x 1/2-bit/4-bit 8ns 8-Pin WSON EP Tray
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