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S25FL256SAGBHIA10
S25FL256SAGBHIA10
Flash S25FL256SAGBHIA10
Cypress
S25FL256SAGBHIA10
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.B.1.A
PackagingTray
Page Size256byte|512byte
Pin Count24
AutomotiveNo
Boot BlockYes
Lead ShapeBall
ECC SupportYes
PCB changed24
Part StatusActive
Sector Size256Kbyte x 128
Timing TypeSynchronous
ArchitectureSectored
Package Width6
Interface TypeSerial (SPI, Dual SPI, Quad SPI)
Package Height1.2(Max) - 0.2(Min)
Package Length8
Number of Words256M/128M/64M
ProgrammabilityYes
Supplier PackageBGA
Block OrganizationSymmetrical
Chip Density (bit)256M
Command CompatibleYes
Process Technology65nm, MirrorBit
Program Current (mA)100
Support of Page ModeNo
Max. Access Time (ns)14.5
Standard Package NameBGA
Location of Boot BlockBottom|Top
Maximum Erase Time (s)330/Bulk
Operating Current (mA)100
Address Bus Width (bit)32
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)1/2/4
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)0.75/Page
Maximum Operating Frequency (MHz)133
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 256M-bit 256M/128M/64M x 1/2-bit/4-bit 14.5ns 24-Pin BGA Tray
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