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S25FL256SAGNFI003
S25FL256SAGNFI003
Flash S25FL256SAGNFI003
Infineon
S25FL256SAGNFI003
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTape and Reel
Page Size256byte|512byte
Pin Count8
AutomotiveNo
Boot BlockYes
Lead ShapeNo Lead
ECC SupportYes
PCB changed8
Part StatusActive
Sector Size64Kbyte x 512
Timing TypeSynchronous
ArchitectureSectored
Package Width8
Interface TypeSerial (SPI, Dual SPI, Quad SPI)
Package Height0.73
Package Length6
Number of Words256M/128M/64M
ProgrammabilityYes
Supplier PackageWSON EP
Block OrganizationSymmetrical
Chip Density (bit)256M
Command CompatibleYes
Process Technology65nm, MirrorBit
Program Current (mA)100
Support of Page ModeNo
Max. Access Time (ns)14.5
Standard Package NameSON
Location of Boot BlockBottom|Top
Maximum Erase Time (s)330/Bulk
Operating Current (mA)100
Address Bus Width (bit)32
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)1/2/4
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)0.75/Page
Maximum Operating Frequency (MHz)133
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 256M-bit 256M/128M/64M x 1/2-bit/4-bit 14.5ns 8-Pin WSON EP T/R
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