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S25FL512SAGBHB210
S25FL512SAGBHB210
Flash S25FL512SAGBHB210
Cypress
S25FL512SAGBHB210
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPYes
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991b.1.a.
Page Size512byte
Pin Count24
AutomotiveYes
Boot BlockYes
Lead ShapeBall
ECC SupportYes
PCB changed24
Part StatusActive
Sector Size256Kbyte x 256
Timing TypeSynchronous
ArchitectureSectored
Package Width6
Interface TypeSerial (SPI, Dual SPI, Quad SPI)
Package Height1.2(Max) - 0.2(Min)
Package Length8
Number of Words512M/256M/128M
ProgrammabilityYes
Supplier PackageBGA
Block OrganizationSymmetrical
Chip Density (bit)512M
Command CompatibleYes
Process Technology65nm, MirrorBit
Program Current (mA)100
Support of Page ModeNo
Max. Access Time (ns)14.5
Standard Package NameBGA
Location of Boot BlockBottom|Top
Maximum Erase Time (s)460/Bulk
Operating Current (mA)100
Address Bus Width (bit)32
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)1/2/4
Minimum Endurance (Cycles)100000
Supplier Temperature GradeAutomotive
Maximum Programming Time (ms)0.34(Typ)/Page
Maximum Operating Frequency (MHz)133
Maximum Operating Temperature (°C)105
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 512M-bit 512M/256M/128M x 1/2-bit/4-bit 14.5ns Automotive 24-Pin BGA Tray
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