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S25FL512SAGBHEC13
S25FL512SAGBHEC13
Flash S25FL512SAGBHEC13
Cypress
S25FL512SAGBHEC13
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
EU RoHSCompliant with Exemption
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTape and Reel
Page Size512byte
Boot BlockYes
ECC SupportYes
Part StatusActive
Sector Size256Kbyte x 256
Timing TypeSynchronous
ArchitectureSectored
Interface TypeSerial (SPI, Dual SPI, Quad SPI)
Number of Words512M/256M/128M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)512M
Command CompatibleYes
Process Technology65nm, MirrorBit
Program Current (mA)100
Support of Page ModeNo
Max. Access Time (ns)14.5
Location of Boot BlockBottom|Top
Maximum Erase Time (S)460/Bulk
Operating Current (mA)100
Address Bus Width (bit)32
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)1/2/4
Supplier Temperature GradeMilitary
Maximum Programming Time (ms)1.3/Page
Maximum Operating Frequency (MHz)133
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-55
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 512M-bit 512M/256M/128M x 1/2-bit/4-bit 14.5ns T/R
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