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S25FS512SAGNFI010
S25FS512SAGNFI010
Flash S25FS512SAGNFI010
Cypress
S25FS512SAGNFI010
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991b.1.a.
PackagingTray
Page Size256byte|512byte
Pin Count8
AutomotiveNo
Boot BlockYes
Lead ShapeNo Lead
ECC SupportYes
PCB changed8
Part StatusActive
Sector Size256Kbyte x 256
Timing TypeSynchronous
ArchitectureSectored
Package Width8
Interface TypeSerial (SPI, Dual SPI, Quad SPI)
Package Height0.75(Max)
Package Length6
Number of Words512M/256M/128M
ProgrammabilityYes
Supplier PackageWSON EP
Block OrganizationSymmetrical
Chip Density (bit)512M
Command CompatibleYes
Process Technology65nm, MirrorBit
Program Current (mA)60
Support of Page ModeNo
Max. Access Time (ns)8
Standard Package NameSON
Location of Boot BlockBottom|Top
Maximum Erase Time (S)720/Chip
Operating Current (mA)100
Address Bus Width (bit)32
Programming Voltage (V)1.7 to 2
Number of Bits/Word (bit)1/2/4
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)2/Page
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)2
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 512M-bit 512M/256M/128M x 1/2-bit/4-bit 8ns 8-Pin WSON EP Tray
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