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Flash S25HL512TDPMHI010
Cypress
S25HL512TDPMHI010
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.B.1.A
PackagingTray
Page Size256byte|512byte
Pin Count16
AutomotiveNo
Boot BlockYes
ECC SupportYes
PCB changed16
Part StatusActive
Sector Size256Kbyte x 256
Timing TypeSynchronous
ArchitectureSectored
Interface TypeSerial (SPI, Dual SPI, Quad SPI)
Number of Words64M
ProgrammabilityYes
Supplier PackageSOIC
Block OrganizationSymmetrical
Chip Density (bit)512M
Command CompatibleYes
Process Technology45nm, MirrorBit
Program Current (mA)50
Support of Page ModeNo
Location of Boot BlockBottom|Top
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)1280000
Supplier Temperature GradeIndustrial
Maximum Operating Frequency (MHz)133
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 512M-bit 64M x 8 16-Pin SOIC Tray
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