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Flash S25HS02GTDPBHV150
Cypress
S25HS02GTDPBHV150
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.02
Cell TypeNOR
ECCN (US)3A991.B.1.A
Page Size256byte/512byte
Boot BlockYes
ECC SupportYes
Sector Size256Kbyte x 1024
Timing TypeSynchronous
ArchitectureSectored
Interface TypeSerial (SPI, Dual SPI, Quad SPI)
Number of Words2G/1G/512M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)2G
Command CompatibleYes
Process Technology45nm, MirrorBit
Program Current (mA)66
Support of Page ModeNo
Max. Access Time (ns)9
Location of Boot BlockBottom|Top
Maximum Erase Time (S)2762/Bulk
Operating Current (mA)110
Address Bus Width (bit)32
Number of Bits/Word (bit)1/2/4
Supplier Temperature GradeIndustrial Plus
Maximum Programming Time (ms)1.7/Page
Maximum Operating Frequency (MHz)133
Maximum Operating Temperature (°C)105
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)2
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 2G-bit 2G/1G/512M x 1/2-bit/4-bit 9ns
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