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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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Flash S25HS512TDPBHI010
Cypress
S25HS512TDPBHI010
--
Memory
Flash
S25HS512TDPBHI010.pdf
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
Cell TypeNOR
ECCN (US)3A991b.1.a.
PackagingTray
Page Size256byte|512byte
Pin Count24
AutomotiveNo
Boot BlockYes
ECC SupportYes
Part StatusActive
Sector Size256Kbyte x 256
Timing TypeSynchronous
ArchitectureSectored
Interface TypeSerial (SPI, Dual SPI, Quad SPI)
Number of Words64M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)512M
Command CompatibleYes
Process Technology45nm, MirrorBit
Program Current (mA)50
Support of Page ModeNo
Location of Boot BlockBottom|Top
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)1280000
Supplier Temperature GradeIndustrial
Maximum Operating Frequency (MHz)133
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)2
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 512M-bit 64M x 8 24-Pin Tray
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