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Flash S25HS512TDSMHV013
Infineon
S25HS512TDSMHV013
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
Cell TypeNOR
ECCN (US)3A991.b.1.a
Page Size256byte|512byte
AutomotiveNo
Boot BlockYes
ECC SupportYes
Part StatusActive
Sector Size256Kbyte x 256
Timing TypeSynchronous
ArchitectureSectored
Interface TypeSerial (SPI, Dual SPI, Quad SPI)
Number of Words64M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)512M
Command CompatibleYes
Process Technology45nm, MirrorBit
Program Current (mA)58
Support of Page ModeNo
Max. Access Time (ns)8
Location of Boot BlockBottom|Top
Maximum Erase Time (S)696/Chip
Operating Current (mA)69
Address Bus Width (bit)32
Programming Voltage (V)1.7 to 2
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)1280000
Supplier Temperature GradeIndustrial Plus
Maximum Programming Time (ms)1.7/Page
Maximum Operating Frequency (MHz)166
Maximum Operating Temperature (°C)105
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)2
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 512M-bit 64M x 8 8ns
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