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Flash S26HS512TGABHI000
Cypress
S26HS512TGABHI000
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
Cell TypeNOR
ECCN (US)3A991b.1.a.
PackagingTray
Page Size256byte/512byte
Pin Count24
AutomotiveNo
Boot BlockYes
ECC SupportYes
Part StatusActive
Sector Size256Kbyte x 256
Timing TypeSynchronous
ArchitectureSectored
Interface TypeSerial-SPI
Number of Words64M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)512M
Command CompatibleYes
Process Technology45nm, MirrorBit
Program Current (mA)50
Support of Page ModeNo
Location of Boot BlockBottom|Top
Operating Current (mA)156
Programming Voltage (V)1.7 to 2
Number of Bits/Word (bit)8
Supplier Temperature GradeIndustrial
Maximum Operating Frequency (MHz)200
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)2
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
NOR Flash Serial-SPI 1.8V 512M-bit 64M x 8 24-Pin Tray
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