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S26KS128SDABHI030
S26KS128SDABHI030
Flash S26KS128SDABHI030
Infineon
S26KS128SDABHI030
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTray
Pin Count24
AutomotiveNo
Boot BlockYes
ECC SupportYes
PCB changed24
Part StatusActive
Sector Size64Kbyte x 256
Timing TypeSynchronous
ArchitectureSectored
Package Width6
Interface TypeHyper
Package Height1(Max) - 0.2(Min)
Package Length8
Number of Words16M
ProgrammabilityYes
Supplier PackageFortified BGA
Block OrganizationSymmetrical
Chip Density (bit)128M
Command CompatibleYes
Program Current (mA)100
Support of Page ModeYes
Max. Access Time (ns)96
Location of Boot BlockBottom|Top
Maximum Erase Time (S)115/Chip
Operating Current (mA)180
Address Bus Width (bit)18
Programming Voltage (V)1.7 to 2
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)1.26/Word
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)1.95
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
NOR Flash Hyper 1.8V 128M-bit 16M x 8 96ns 24-Pin Fortified BGA Tray
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