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S26KS512SDGBHB030
S26KS512SDGBHB030
Flash S26KS512SDGBHB030
Cypress
S26KS512SDGBHB030
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPYes
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTray
Pin Count24
AutomotiveYes
Boot BlockYes
Lead ShapeBall
ECC SupportYes
PCB changed24
Part StatusActive
Sector Size64Kbyte x 1024
Timing TypeSynchronous
ArchitectureSectored
Package Width6
Interface TypeHyper
Package Height1(Max) - 0.2(Min)
Package Length8
Number of Words64M
ProgrammabilityYes
Supplier PackageFortified BGA
Block OrganizationSymmetrical
Chip Density (bit)512M
Command CompatibleYes
Process Technology65nm
Program Current (mA)100
Support of Page ModeYes
Max. Access Time (ns)96
Standard Package NameBGA
Location of Boot BlockBottom|Top
Maximum Erase Time (s)462/Chip
Operating Current (mA)180
Address Bus Width (bit)18
Programming Voltage (V)1.7 to 1.95
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000
Supplier Temperature GradeAutomotive
Maximum Programming Time (ms)1.26/Word
Maximum Operating Temperature (°C)105
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)1.95
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
NOR Flash Hyper 1.8V 512M-bit 64M x 8 96ns Automotive 24-Pin Fortified BGA Tray
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