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S28HS512TGABHI013
S28HS512TGABHI013
Flash S28HS512TGABHI013
Cypress
S28HS512TGABHI013
--
Memory
Flash
Specification
Product AttributeAttribute Value
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTape and Reel
Page Size256byte|512byte
Pin Count24
Boot BlockYes
ECC SupportYes
PCB changed24
Part StatusActive
Sector Size256Kbyte x 256
Timing TypeSynchronous
ArchitectureSectored
Package Width6
Interface TypeSerial-SPI
Package Height1(Max) - 0.2(Min)
Package Length8
Number of Words64M
ProgrammabilityYes
Supplier PackageBGA
Block OrganizationSymmetrical
Chip Density (bit)512M
Command CompatibleYes
Process Technology45nm, MirrorBit
Program Current (mA)58
Support of Page ModeNo
Max. Access Time (ns)8
Location of Boot BlockBottom|Top
Maximum Erase Time (s)696/Chip
Operating Current (mA)173
Address Bus Width (bit)32
Programming Voltage (V)1.7 to 2
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)1280000
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)1.7/Page
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)2
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
NOR Flash Serial-SPI 1.8V 512M-bit 64M x 8 8ns 24-Pin BGA T/R
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