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S29AL008D70BAI013
S29AL008D70BAI013
Flash S29AL008D70BAI013
Cypress
S29AL008D70BAI013
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)EAR99
PackagingTape and Reel
Pin Count48
AutomotiveNo
Boot BlockYes
Lead ShapeBall
ECC SupportNo
PCB changed48
Part StatusObsolete
Sector Size64Kbyte x 15|32Kbyte x 1|8Kbyte x 2|16Kbyte x 1
Timing TypeAsynchronous
ArchitectureSectored
Package Width6.15
Interface TypeParallel
Package Height0.76(Max)
Package Length8.15
Number of Words1M/512K
ProgrammabilityYes
Supplier PackageFBGA
Block OrganizationAsymmetrical
Chip Density (bit)8M
Command CompatibleYes
OE Access Time (ns)30
Program Current (mA)35
Support of Page ModeNo
Max. Access Time (ns)70
Standard Package NameBGA
Location of Boot BlockTop
Maximum Erase Time (S)10/Sector
Operating Current (mA)30
Address Bus Width (bit)20/19
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)8/16
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)25000/Chip
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3|3
Description
NOR Flash Parallel 3V/3.3V 8M-bit 1M x 8/512K x 16 70ns 48-Pin FBGA T/R
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