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S29AS016J70BHI042
S29AS016J70BHI042
Flash S29AS016J70BHI042
Infineon
S29AS016J70BHI042
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.51
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)EAR99
PackagingTape and Reel
Pin Count48
AutomotiveNo
Boot BlockYes
Lead ShapeBall
ECC SupportNo
PCB changed48
Part StatusActive
Sector Size8Kbyte x 8|64Kbyte x 31
Timing TypeAsynchronous
ArchitectureSectored
Package Width6.15
Interface TypeParallel
Package Height1(Max) - 0.18(Min)
Package Length8.15
Number of Words2M/1M
ProgrammabilityYes
Supplier PackageFBGA
Block OrganizationAsymmetrical
Chip Density (bit)16M
Command CompatibleYes
OE Access Time (ns)25
Program Current (mA)30
Support of Page ModeYes
Max. Access Time (ns)70
Standard Package NameBGA
Location of Boot BlockBottom
Maximum Erase Time (S)10/Sector
Operating Current (mA)12
Address Bus Width (bit)20
Programming Voltage (V)1.65 to 1.95
Number of Bits/Word (bit)8/16
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)160000/Chip
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)1.95
Minimum Operating Supply Voltage (V)1.65
Typical Operating Supply Voltage (V)1.8
Description
NOR Flash Parallel 1.8V 16M-bit 2M x 8/1M x 16 70ns 48-Pin FBGA T/R
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