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S29GL032N90BAI030
S29GL032N90BAI030
Flash S29GL032N90BAI030
Cypress
S29GL032N90BAI030
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.51
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.B.1.A
PackagingTray
Page Size8Words/16byte
Pin Count48
AutomotiveNo
Boot BlockYes
Lead ShapeBall
ECC SupportNo
PCB changed48
Part StatusObsolete
Sector Size64Kbyte x 64
Timing TypeAsynchronous
ArchitectureSectored
Package Width6.15
Interface TypeParallel
Package Height0.76(Max)
Package Length8.15
Number of Words4M/2M
ProgrammabilityYes
Supplier PackageFBGA
Block OrganizationAsymmetrical
Chip Density (bit)32M
Command CompatibleYes
Process Technology110nm, MirrorBit
OE Access Time (ns)25
Program Current (mA)60
Support of Page ModeYes
Max. Access Time (ns)90
Standard Package NameBGA
Location of Boot BlockTop
Maximum Erase Time (s)64/Chip
Operating Current (mA)50
Page Read Current (mA)20
Address Bus Width (bit)22/21
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)8/16
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)25
Maximum Programming Time (ms)31500(Typ)/Chip
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Parallel 3V/3.3V 32M-bit 4M x 8/2M x 16 90ns 48-Pin FBGA Tray
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