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S29GL064N11FFIV10
S29GL064N11FFIV10
Flash S29GL064N11FFIV10
Cypress
S29GL064N11FFIV10
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.51
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991b.1.a.
PackagingTray
Page Size8Words/16byte
Pin Count64
AutomotiveNo
Boot BlockNo
Lead ShapeBall
ECC SupportNo
PCB changed64
Part StatusObsolete
Sector Size64Kbyte x 128
Timing TypeAsynchronous
ArchitectureSectored
Package Width11
Interface TypeParallel
Package Height0.6(Min)
Package Length13
Number of Words8M/4M
ProgrammabilityYes
Supplier PackageFortified BGA
Block OrganizationSymmetrical
Chip Density (bit)64M
Command CompatibleYes
Process Technology110nm, MirrorBit
OE Access Time (ns)30
Program Current (mA)60
Support of Page ModeYes
Max. Access Time (ns)110
Standard Package NameBGA
Maximum Erase Time (S)128/Chip
Operating Current (mA)50
Page Read Current (mA)20
Address Bus Width (bit)23/22
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)8/16
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)25
Maximum Programming Time (ms)63000(Typ)/Chip
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Parallel 3V/3.3V 64M-bit 8M x 8/4M x 16 110ns 64-Pin Fortified BGA Tray
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