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S29GL064N90FAI030
S29GL064N90FAI030
Flash S29GL064N90FAI030
Cypress
S29GL064N90FAI030
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.51
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.B.1.A
PackagingTray
Page Size8Words/16byte
Pin Count64
AutomotiveNo
Boot BlockYes
Lead ShapeBall
ECC SupportNo
PCB changed64
Part StatusObsolete
Sector Size64Kbyte x 128
Timing TypeAsynchronous
ArchitectureSectored
Package Width11
Interface TypeParallel
Package Height0.6(Min)
Package Length13
Number of Words8M/4M
ProgrammabilityYes
Supplier PackageFortified BGA
Block OrganizationSymmetrical
Chip Density (bit)64M
Command CompatibleYes
Process Technology110nm
OE Access Time (ns)25
Program Current (mA)60
Support of Page ModeYes
Max. Access Time (ns)90
Standard Package NameBGA
Location of Boot BlockTop
Maximum Erase Time (s)128/Chip
Operating Current (mA)50
Page Read Current (mA)20
Address Bus Width (bit)23/22
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)8/16
Minimum Endurance (Cycles)100000(Typ)
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)25
Maximum Programming Time (ms)63000(Typ)/Chip
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Parallel 3V/3.3V 64M-bit 8M x 8/4M x 16 90ns 64-Pin Fortified BGA Tray
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