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S29GL128S10FHSS10
S29GL128S10FHSS10
Flash S29GL128S10FHSS10
Infineon
S29GL128S10FHSS10
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.51
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
Page Size32byte
Pin Count64
AutomotiveNo
Boot BlockYes
ECC SupportYes
PCB changed64
Part StatusActive
Sector Size128Kbyte x 128
Timing TypeAsynchronous
ArchitectureSectored
Package Width11
Interface TypeParallel
Package Height0.6(Min)
Package Length13
Number of Words8M
ProgrammabilityYes
Supplier PackageFortified BGA
Block OrganizationSymmetrical
Chip Density (bit)128M
Command CompatibleYes
Process Technology65nm, MirrorBit
Support of Page ModeYes
Max. Access Time (ns)100
Location of Boot BlockBottom|Top
Address Bus Width (bit)23
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)16
Minimum Endurance (Cycles)100000
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Parallel 3V/3.3V 128M-bit 8M x 16 100ns 64-Pin Fortified BGA Tray
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