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S29GL128S10TFV023
S29GL128S10TFV023
Flash S29GL128S10TFV023
Cypress
S29GL128S10TFV023
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.B.1.A
PackagingTape and Reel
Page Size32byte
Pin Count56
AutomotiveNo
Boot BlockYes
Lead ShapeGull-wing
ECC SupportYes
PCB changed56
Part StatusActive
Sector Size128Kbyte x 128
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.4
Interface TypeParallel
Package Height1
Package Length14
Number of Words8M
ProgrammabilityYes
Supplier PackageTSOP
Block OrganizationSymmetrical
Chip Density (bit)128M
Command CompatibleYes
Process Technology65nm, MirrorBit
OE Access Time (ns)25
Program Current (mA)100
Support of Page ModeYes
Max. Access Time (ns)100
Standard Package NameSOP
Location of Boot BlockBottom|Top
Maximum Erase Time (s)1.1/Sector
Operating Current (mA)60
Page Read Current (mA)25
Address Bus Width (bit)23
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)16
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial Plus
Maximum Page Access Time (ns)15
Maximum Programming Time (ms)269/Sector
Maximum Operating Temperature (°C)105
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Parallel 3V/3.3V 128M-bit 8M x 16 100ns 56-Pin TSOP T/R
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