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Flash S29GL128S11FHVV23
Infineon
S29GL128S11FHVV23
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPYes
EU RoHSCompliant
Cell TypeNOR
ECCN (US)3A991.b.1.a
Page Size32byte
AutomotiveYes
Boot BlockYes
ECC SupportYes
Part StatusActive
Sector Size128Kbyte x 128
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel
Number of Words8M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)128M
Command CompatibleYes
Process Technology65nm, MirrorBit
OE Access Time (ns)35
Program Current (mA)100
Support of Page ModeYes
Max. Access Time (ns)110
Location of Boot BlockBottom|Top
Maximum Erase Time (S)1.1/Sector
Operating Current (mA)60
Page Read Current (mA)25
Address Bus Width (bit)23
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)16
Supplier Temperature GradeIndustrial Plus
Maximum Page Access Time (ns)30
Maximum Programming Time (ms)269/Sector
Maximum Operating Temperature (°C)105
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Parallel 3V/3.3V 128M-bit 8M x 16 110ns T/R
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