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S29GL256P11FAI012
S29GL256P11FAI012
Flash S29GL256P11FAI012
Cypress
S29GL256P11FAI012
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.B.1.A
PackagingTape and Reel
Page Size8Words/16byte
Pin Count64
AutomotiveNo
Boot BlockNo
Lead ShapeBall
ECC SupportNo
PCB changed64
Part StatusActive
Sector Size128Kbyte x 256
Timing TypeAsynchronous
ArchitectureSectored
Package Width11
Interface TypeParallel
Package Height0.6(Min)
Package Length13
Number of Words32M/16M
ProgrammabilityYes
Supplier PackageFortified BGA
Block OrganizationSymmetrical
Chip Density (bit)256M
Command CompatibleYes
Process Technology90nm, MirrorBit
OE Access Time (ns)25
Program Current (mA)90
Support of Page ModeYes
Max. Access Time (ns)110
Standard Package NameBGA
Maximum Erase Time (s)512/Chip
Operating Current (mA)110
Page Read Current (mA)20
Address Bus Width (bit)25/24
Programming Voltage (V)11.5 to 12.5|2.7 to 3.6
Number of Bits/Word (bit)8/16
Minimum Endurance (Cycles)100000(Typ)
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)25
Maximum Programming Time (ms)246000(Typ)/Chip
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3|3
Description
NOR Flash Parallel 3V/3.3V 256M-bit 32M x 8/16M x 16 110ns 64-Pin Fortified BGA T/R
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