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S29GL256S10DHV023
S29GL256S10DHV023
Flash S29GL256S10DHV023
Cypress
S29GL256S10DHV023
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.B.1.A
PackagingTape and Reel
Page Size32byte
Pin Count64
AutomotiveNo
Boot BlockYes
Lead ShapeBall
ECC SupportYes
PCB changed64
Part StatusActive
Sector Size128Kbyte x 256
Timing TypeAsynchronous
ArchitectureSectored
Package Width9
Interface TypeParallel
Package Height0.6(Min)
Package Length9
Number of Words16M
ProgrammabilityYes
Supplier PackageFortified BGA
Block OrganizationSymmetrical
Chip Density (bit)256M
Command CompatibleYes
Process Technology65nm, MirrorBit
OE Access Time (ns)25
Program Current (mA)100
Support of Page ModeYes
Max. Access Time (ns)100
Standard Package NameBGA
Location of Boot BlockBottom|Top
Maximum Erase Time (s)1.1/Sector
Operating Current (mA)60
Page Read Current (mA)25
Address Bus Width (bit)24
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)16
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial Plus
Maximum Page Access Time (ns)15
Maximum Programming Time (ms)269/Sector
Maximum Operating Temperature (°C)105
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3|3
Description
NOR Flash Parallel 3V/3.3V 256M-bit 16M x 16 100ns 64-Pin Fortified BGA T/R
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