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S29GL512N10FAI010
S29GL512N10FAI010
Flash S29GL512N10FAI010
Cypress
S29GL512N10FAI010
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTray
Page Size8Words/16byte
Pin Count64
AutomotiveNo
Boot BlockYes
Lead ShapeBall
ECC SupportNo
PCB changed64
Part StatusObsolete
Sector Size128Kbyte x 512
Timing TypeAsynchronous
ArchitectureSectored
Package Width11
Interface TypeParallel
Package Height0.6(Min)
Package Length13
Number of Words64M/32M
ProgrammabilityYes
Supplier PackageFortified BGA
Block OrganizationSymmetrical
Chip Density (bit)512M
Command CompatibleYes
Process Technology110nm, MirrorBit
OE Access Time (ns)25
Program Current (mA)90
Support of Page ModeYes
Max. Access Time (ns)100
Standard Package NameBGA
Location of Boot BlockBottom|Top
Maximum Erase Time (S)1024/Chip
Operating Current (mA)90
Page Read Current (mA)10@10MHz
Address Bus Width (bit)26/25
Programming Voltage (V)2.7 to 3.6|11.5 to 12.5
Number of Bits/Word (bit)8/16
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)25
Maximum Programming Time (ms)492000(Typ)/Chip
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Parallel 3V/3.3V 512M-bit 64M x 8/32M x 16 100ns 64-Pin Fortified BGA Tray
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