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Flash S29GL512S10DHV010
Cypress
S29GL512S10DHV010
--
Memory
Flash
Specification
Product AttributeAttribute Value
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTray
Page Size32byte
Boot BlockYes
ECC SupportYes
Sector Size128Kbyte x 512
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel
Number of Words32M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)512M
Command CompatibleYes
Process Technology65nm, MirrorBit
OE Access Time (ns)25
Program Current (mA)100
Support of Page ModeYes
Max. Access Time (ns)100
Location of Boot BlockBottom|Top
Maximum Erase Time (S)1.1/Sector
Operating Current (mA)60
Page Read Current (mA)25
Address Bus Width (bit)25
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)16
Supplier Temperature GradeIndustrial Plus
Maximum Programming Time (ms)269/Sector
Maximum Operating Temperature (°C)105
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Parallel 3V/3.3V 512M-bit 32M x 16 100ns Tray
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