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S29JL064J55BHI000
S29JL064J55BHI000
Flash S29JL064J55BHI000
Infineon
S29JL064J55BHI000
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Bank Size8/24/24/8Mb
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTray
Page Size4Words/8Words
Pin Count48
AutomotiveNo
Boot BlockYes
Lead ShapeBall
ECC SupportNo
PCB changed48
Part StatusUnconfirmed
Sector Size8Kbyte x 16|64Kbyte x 126
Timing TypeAsynchronous
ArchitectureSectored
Package Width6.15
Interface TypeParallel
Package Height1(Max) - 0.18(Min)
Package Length8.15
Number of Banks4
Number of Words8M/4M
ProgrammabilityYes
Supplier PackageFBGA
Block OrganizationAsymmetrical
Chip Density (bit)64M
Command CompatibleYes
Process Technology110nm
OE Access Time (ns)25
Program Current (mA)45
Support of Page ModeNo
Max. Access Time (ns)55
Standard Package NameBGA
Location of Boot BlockBottom|Top
Maximum Erase Time (S)5/Sector
Operating Current (mA)30
Address Bus Width (bit)23/22
Programming Voltage (V)2.7 to 3.6|8.5 to 9.5
Number of Bits/Word (bit)8/16
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)0.08/Byte
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Parallel 3V/3.3V 64M-bit 8M x 8/4M x 16 55ns 48-Pin FBGA Tray
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