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S29PL032J60BFI120
S29PL032J60BFI120
Flash S29PL032J60BFI120
Cypress
S29PL032J60BFI120
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Bank Size4/12/12/4Mb
Cell TypeNOR
ECCN (US)3A991b.1.a.
PackagingTray
Page Size8Words
Pin Count48
AutomotiveNo
Boot BlockYes
Lead ShapeBall
ECC SupportNo
PCB changed48
Part StatusObsolete
Sector Size64Kbyte x 62|8Kbyte x 16
Timing TypeAsynchronous
ArchitectureSectored
Package Width6.15
Interface TypeParallel
Package Height1(Max) - 0.18(Min)
Package Length8.15
Number of Banks4
Number of Words2M
ProgrammabilityYes
Supplier PackageFBGA
Block OrganizationAsymmetrical
Chip Density (bit)32M
Command CompatibleYes
Process Technology110nm
OE Access Time (ns)25
Program Current (mA)25
Support of Page ModeYes
Max. Access Time (ns)60
Standard Package NameBGA
Location of Boot BlockTop|Bottom
Maximum Erase Time (s)62.4/Chip
Operating Current (mA)55
Page Read Current (mA)15
Address Bus Width (bit)21
Programming Voltage (V)8.5 to 9.5|2.7 to 3.6
Number of Bits/Word (bit)16
Minimum Endurance (Cycles)1000000
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)25
Maximum Programming Time (ms)25200/Chip
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3|3
Description
NOR Flash Parallel 3V/3.3V 32M-bit 2M x 16 60ns 48-Pin FBGA Tray
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