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S29PL127J70BAI000
S29PL127J70BAI000
Flash S29PL127J70BAI000
Cypress
S29PL127J70BAI000
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
Bank Size16/48/48/16Mb
Cell TypeNOR
ECCN (US)3A991.B.1.A
PackagingTray
Page Size8Words
Pin Count80
AutomotiveNo
Boot BlockYes
Lead ShapeBall
ECC SupportNo
PCB changed80
Part StatusObsolete
Sector Size64Kbyte x 254|8Kbyte x 16
Timing TypeAsynchronous
ArchitectureSectored
Package Width8
Interface TypeParallel
Package Height0.76(Max)
Package Length11
Number of Banks4
Number of Words8M
ProgrammabilityYes
Supplier PackageFBGA
Block OrganizationAsymmetrical
Chip Density (bit)128M
Command CompatibleYes
Process Technology110nm, MirrorBit
OE Access Time (ns)30
Program Current (mA)25
Support of Page ModeYes
Max. Access Time (ns)70
Standard Package NameBGA
Location of Boot BlockTop|Bottom
Maximum Erase Time (S)216/Chip
Operating Current (mA)55
Page Read Current (mA)15
Address Bus Width (bit)23
Programming Voltage (V)8.5 to 9.5|2.7 to 3.6
Number of Bits/Word (bit)16
Minimum Endurance (Cycles)1000000(Typ)
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)30
Maximum Programming Time (ms)200000/Chip
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3|3
Description
NOR Flash Parallel 3V/3.3V 128M-bit 8M x 16 70ns 80-Pin FBGA Tray
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