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S29PLO64J6OBAI120
S29PLO64J6OBAI120
Flash S29PLO64J6OBAI120
Cypress
S29PLO64J6OBAI120
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
Bank Size8/8/24/24Mb
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTray
Page Size8Words
Pin Count48
AutomotiveNo
Boot BlockYes
Lead ShapeBall
ECC SupportNo
PCB changed48
Part StatusObsolete
Sector Size64Kbyte x 126|8Kbyte x 16
Timing TypeAsynchronous
ArchitectureSectored
Package Width6.15
Interface TypeParallel
Package Height0.76(Max)
Package Length8.15
Number of Banks4
Number of Words4M
ProgrammabilityYes
Supplier PackageFBGA
Block OrganizationAsymmetrical
Chip Density (bit)64M
Command CompatibleYes
Process Technology110nm
OE Access Time (ns)25
Program Current (mA)25
Support of Page ModeYes
Max. Access Time (ns)60
Standard Package NameBGA
Location of Boot BlockTop|Bottom
Maximum Erase Time (S)113.6/Chip
Operating Current (mA)55
Page Read Current (mA)15
Address Bus Width (bit)22
Programming Voltage (V)8.5 to 9.5|2.7 to 3.6
Number of Bits/Word (bit)16
Minimum Endurance (Cycles)1000000(Typ)
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)25
Maximum Programming Time (ms)50400/Chip
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3|3
Description
NOR Flash Parallel 3V/3.3V 64M-bit 4M x 16 60ns 48-Pin FBGA Tray
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